Лозинская Анастасия Дмитриевна

Публикации

Общее число записей - 30
1 Characterisation of the HEXITECX4S X-ray spectroscopic imaging detector incorporating through-silicon via (TSV) technology / Chsherbakov I.D., Kolesnikova I.I., Lozinskaya A.D., Novikov V.A. [et al] // Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2022. Vol. 1025. Art. num. 166083. DOI: 10.1016/j.nima.2021.166083
2 High-spatial resolution measurements with a GaAs:Cr sensor using the charge integrating MÖNCH detector with a pixel pitch of 25 m / I.D. Chsherbakov, A.D. Lozinskaya, O.P. Tolbanov, A.V. Tyazhev [et al] // Journal of Instrumentation. 2022. Vol. 17, № 4. Art. num. P04007. DOI: 10.1088/1748-0221/17/04/P04007
3 Lozinskaya A.D., Veale M.C., Kolesnikova I.I., Novikov V.A., Tolbanov O.P., Tyazhev A.V., Wheater R.M., Zarubin A.N. Influence of temperature on the energy resolution of sensors based on HR GaAs:Cr //Journal of Instrumentation. 2021. Vol. 16, № 2. P. P02026.
4 Characterization of chromium compensated gaas sensors with the charge-integrating jungfrau readout chip by means of a highly collimated pencil beam / Greiffenberg D., Chsherbakov I.D., Lozinskaya A.D., Tolbanov O.P. [et al] // Sensors. 2021. Vol. 21, № 4. P. 1550(24pp). URL: https://www.mdpi.com/1424-8220/21/4/1550 (date of access: 05.12.2021).
5 Wheater R.M., Jowitt L., Richards S., Veale M.C., Wilson M.D., Fox O.J.L., Sawhney K.J.S., Lozinskaya A.D., Shemeryankina A.V., Tolbanov O.P., Tyazhev A.V., Zarubin A.N. X-ray microbeam characterisation of crystalline defects in small pixel GaAs:Cr detectors //Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2021. Vol. 999. P. 165207.
6 Impact of Cr2O3 additives on the gas-sensitive properties of β-Ga2O3 thin films to oxygen, hydrogen, carbon monoxide and toluene vapors / Almaev A.V., Chernikov E.V., Novikov V.A., Kushnarev B.O. [et al] // Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 2021. Vol. 39, № 2. P. 023405. DOI: 10.1116/6.0000723
7 Chsherbakov I.D., Chsherbakov P.S., Lozinskaya A.D., Mikhailov T.A., Novikov V.A., Shemeryankina A.V., Tolbanov O.P., Tyazhev A.V., Zarubin A.N., et al., and 1 more. Response of HR-GaAs:Cr sensors to subnanosecond X-and -ray pulses //Journal of Instrumentation. 2019. Vol. 14, № 12. P. C12016(8pp).
8 Lozinskaya A.D., Chsherbakov I.D., Kolesnikova I.I., Mikhailov T.A., Novikov V.A., Shemeryankina A.V., Tolbanov O.P., Tyazhev A.V., Zarubin A.N. Detailed analysis of quasi-ohmic contacts to high resistive GaAs:Cr structures //Journal of Instrumentation. 2019. Vol. 14, № 11. P. C11026(8pp).
9 Greiffenberg D., Chsherbakov I.D., Lozinskaya A.D., Tolbanov O.P., Tyazhev A.V., Zarubin A.N., Et Al., and 21 more. Characterization of GaAs:Cr sensors using the charge-integrating JUNGFRAU readout chip //Journal of Instrumentation. 2019. Vol. 14, № 5. P. P05020(19pp).
10 Chsherbakov I.D., Chsherbakov P.S., Kolesnikova I.I., Lozinskaya A.D., Mihaylov T.A., Novikov V.A., Tolbanov O.P., Tyazhev A.V., Zarubin A.N. The influence of contact material and its fabrication on X-ray HR-GaAs:Cr sensor noise characteristics //Journal of Instrumentation. 2019. Vol. 14, № 1. P. C01026(9pp).
11 Ruat M., Andra M., Lozinskaya A.D., Novikov V.A., Tolbanov O.P., Tyazhev A.V., Zarubin A.N., et al., and 17 more. Photon counting microstrip X-ray detectors with GaAs sensors //Journal of Instrumentation. 2018. Vol. 13, № 1. P. C01046(10pp).
12 Павлов И.Г., Лозинская А.Д. Температурные зависимости эффективности сбора заряда сенсоров на основе GaAs:Cr-структур //Труды Пятнадцатой Всероссийской конференции студенческих научно-исследовательских инкубаторов. 17-18 мая 2018 г. Томск: Изд-во НТЛ, 2018. С. 239-242.
13 Shherbakov I.D., Kolesnikova I.I., Lozinskaya A.D., Mikhailov T.A., Novikov V.A., Shemeryankina A.V., Tolbanov O.P., Tyazhev A.V., Zarubin A.N. GaAs:Cr X-ray sensors noise characteristics investigation by means of amplitude spectrum analysis //Journal of Instrumentation. 2018. Vol. 13, № 1. P. C01030(7pp).
14 И.А. Прудаев, В.В. Копьев, И.С. Романов, В.Л. Олейник, А.Д. Лозинская, А.В. Шемерянкина, и другие. Квантово-размерные эффекты переноса носителей заряда в сверхрешетках и множественных квантовых ямах InGaN/GaN //Нитриды галлия, индия и алюминия - структуры и приборы : тез. докл. 11-й Всерос. конф., 1-3 февр. 2017 г., Москва. М., 2017. С. 158-159.
15 C. Ponchut, M. Cotte, A. Lozinskaya, A. Zarubin, O. Tolbanov, A. Tyazhev. Characterisation of GaAs:Cr pixel sensors coupled to Timepix chips in view of synchrotron applications //Journal of Instrumentation. 2017. Vol. 12, № 12. P. C12023(8pp).
16 M.C. Veale, P. Booker, B. Cline, A.D. Lozinskaya, V.A. Novikov, O.P. Tolbanov, A.V. Tyazhev, A.N. Zarubin, et al., and 6 more. MHz rate X-Ray imaging with GaAs:Cr sensors using the LPD detector system //Journal of Instrumentation. 2017. Vol. 12, № 2. P. P02015(20pp).
17 D. Budnitsky, V. Novikov, A. Lozinskaya, I. Kolesnikova, A. Zarubin, A. Shemeryankina, T. Mihaylov, M. Skakunov, O. Tolbanov, A. Tyazhev. Characterization of 4 inch GaAs:Cr wafers //Journal of Instrumentation. 2017. Vol. 12, № 1. P. C01063(9pp).
18 I. Chsherbakov, I. Kolesnikova, A. Lozinskaya, T. Mihaylov, V. Novikov, A. Shemeryankina, O. Tolbanov, A. Tyazhev, A. Zarubin. Electron mobility-lifetime and resistivity mapping of GaAs:Cr wafers //Journal of Instrumentation. 2017. Vol. 12, № 2. P. C02016(10pp).
19 A. Dragone, С. Kenney, A. Lozinskaya, O. Tolbanov, A. Tyazhev, A. Zarubin, Zhehui Wang. Feasibility study of a "4H" X-ray camera based on GaAs:Cr sensor //Journal of Instrumentation. 2016. Vol. 11, № 11. P. C11042.
20 I. Kolesnikova, A. Lozinskaya, T. Mihaylov, V. Novikov, A. Shemeryankina, I. Sherbakov, O. Tolbanov, A. Tyazhev, A. Zarubin. Temperature dependencies of current-voltage characteristics of GaAs:Cr //Journal of Instrumentation. 2016. Vol. 11, № 3. P. C03059.